kw.\*:("ferroelectric")
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Competition between quantum fluctuation and ferroelectric order in Eu1-xBaxTiO3WEI, T; ZHOU, Q. J; YANG, X et al.Applied surface science. 2012, Vol 258, Num 10, pp 4601-4606, issn 0169-4332, 6 p.Article
Monte Carlo Investigation of Mixed Normal and Relaxor FerroelectricsLAOSIRITAWORN, Yongyut; KANCHIANG, Kanokwan; YIMNIRUN, Rattikorn et al.Ferroelectrics (Print). 2009, Vol 382, pp 28-35, issn 0015-0193, 8 p.Conference Paper
Heteroepitaxial growth of Pb(Mg1/3Ta2/3)O3 thin films on SrTiO3 substrates using chemical solution deposition method: microstructural evolutionJEONG, Dae-Soo; SHIM, Yeon-Ah; MOON, Jong-Ha et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 561-567, issn 0167-9317, 7 p.Conference Paper
Fabrication and properties of silicon-based PZT thin films for MFSFET applicationsREN, Tian-Ling; SHAO, Tian-Qi; ZHANG, Wu-Quan et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 554-560, issn 0167-9317, 7 p.Conference Paper
Relaxor-like improper ferroelectricity induced by Si · Sj-type collinear spin ordering in a M-type hexaferrite PbFe6Ga6O19EUN HYE NA; SEUNGWOO SONG; KOO, Yang-Mo et al.Acta materialia. 2013, Vol 61, Num 20, pp 7705-7711, issn 1359-6454, 7 p.Article
The Debye Dielectric Behavior of Mixed Normal and Relaxor-Ferroelectrics: Monte Carlo InvestigationLAOSIRITAWORN, Yongyut; KANCHIANG, Kanokwan; NGAMJARUROJANA, Athipong et al.Ferroelectrics (Print). 2010, Vol 401, pp 239-245, issn 0015-0193, 7 p.Conference Paper
Modeling of Hysteresis Phenomena in Ferroelectric Polymers in a Low Frequency Electric FieldBELOUADAH, R; KENDIL, D; BOUSBIAT, E et al.Journal of intelligent material systems and structures. 2009, Vol 20, Num 6, pp 733-739, issn 1045-389X, 7 p.Article
Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate ElectrodesHORITA, Susumu; BUI NGUYEN QUOC TRINH.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 12, pp 3090-3096, issn 0018-9383, 7 p.Article
Ten-Nanometer Ferroelectric Si:HfO2 Films for Next-Generation FRAM CapacitorsMUELLER, Stefan; SUMMERFELT, Scott R; MÜLLER, Johannes et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1300-1302, issn 0741-3106, 3 p.Article
The Strong Dependence of Polarization Fatigue on Poling-Voltage Conditions in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer FilmsGUODONG ZHU; YU CONG; JIHAO ZHANG et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 359-361, issn 0741-3106, 3 p.Article
Analysis of the Piezoelectric Performance of Modern 0―3-Type Composites Based on Relaxor-Ferroelectric Single CrystalsTOPOLOV, Vitaly YU; BISEGNA, Paolo; BOWEN, Christopher R et al.Ferroelectrics (Print). 2011, Vol 413, pp 176-191, issn 0015-0193, 16 p.Article
Stress Dependent Ferroelectric Properties of PZT and 0.9PZT - O.1BLT CeramicsTHONGMEE, Navavan; UNRUAN, Muangjai; YIMNIRUN, Rattikorn et al.Ferroelectrics (Print). 2009, Vol 382, pp 141-146, issn 0015-0193, 6 p.Conference Paper
Surface anchoring and chevron structure in ferroelectric liquid crystalsHAMANEH, M. B; TAYLOR, P. L.Ferroelectrics. Letters section. 2004, Vol 31, Num 3-4, pp 47-53, issn 0731-5171, 7 p.Article
Fabrication of defect-free ferroelectric liquid crystal cells with anti-parallel rubbed alignment filmsFURUE, Hirokazu; NAKASHIBA, Michiya; NOGUCHI, Yuho et al.Ferroelectrics (Print). 2007, Vol 347, pp 168-173, issn 0015-0193, 6 p.Conference Paper
Linear electrostatic micromotor on the basis of ferroelectric ceramicsBAGINSKY, I. L; KOSTSOV, E. G.Ferroelectrics (Print). 2005, Vol 320, pp 141-148, issn 0015-0193, 8 p.Conference Paper
A MOS-based behavioral macro-model for ferroelectric capacitorsMENG LIU; JINFENG KANG; JINGHUA ZHANG et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 813-817, issn 0167-9317, 5 p.Conference Paper
Modelling of a potential relief on a surface of charged polar dielectricsKOZAKOV, A. T; SAKHNENKO, V. P; LERER, A. M et al.Ferroelectrics (Print). 2007, Vol 353, pp 212-224, issn 0015-0193, 13 p.Conference Paper
Apparent Closure Domain by Standard 180° Domain Theory and Necessity of Fundamental Screening in the TheoryWATANABE, Yukio.Ferroelectrics (Print). 2010, Vol 401, pp 61-64, issn 0015-0193, 4 p.Conference Paper
Ferroelectricity from the aspect of crystal chemistryTHOMANN, H.Siemens Forschungs- und Entwicklungsberichte. 1984, Vol 13, Num 1, pp 15-20, issn 0370-9736Article
On the influence of the switching wake on the fracture toughness of ferroelectric materialsZHENYU HUANG; KUANG, Zhen-Bang.Smart materials and structures. 2003, Vol 12, Num 6, pp 1017-1022, issn 0964-1726, 6 p.Article
EMF 2007. The Eleventh European Meeting on FerroelectricityBOBNAR, Vid; ZALAR, Boštjan.Ferroelectrics (Print). 2008, Vol 370, issn 0015-0193, 255 p.Conference Proceedings
Low-voltage pulse exciting electron emission from ferroelectric copolymer film cathode: Role of film thickness and emission stabilityLI, J. J; LU, C; XIA, X. X et al.Applied surface science. 2010, Vol 256, Num 21, pp 6433-6436, issn 0169-4332, 4 p.Article
2004 14th IEEE International Symposium on Applications of Ferroelectrics-ISAF-04 (23-27 August, 2004, Palais des Congrès, Montréal, Canada)IEEE International Symposium on Applications of Ferroelectrics. 2005, isbn 0-7803-8410-5, 1Vol, XVIII-335 p, isbn 0-7803-8410-5Conference Proceedings
Enhanced dielectric and ferroelectric properties of Pb1―3x/2Lax(Zr0.5Ti0.5)O3 thin films with low lanthanum substitutionZHANG, S. Q; LI, W. L; WANG, L. D et al.Applied surface science. 2011, Vol 257, Num 9, pp 4021-4025, issn 0169-4332, 5 p.Article
Size-driven ferroelectric effects in TGS induced by high hydrostatic pressureSTANKOWSKI, J; WAPLAK, S; JURGA, W et al.Journal of non-crystalline solids. 2010, Vol 356, Num 25-27, pp 1305-1309, issn 0022-3093, 5 p.Article